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Offer: Software

Wire-Mesh-Sensor - Visualization and analysis of two-phase flows

Wire-mesh sensors are imaging instruments for the analysis of gas-liquid and liquid-liquid multiphase flows. They combine a robust design, secure phase discrimination and ultrafast measurement. Wire-mesh sensors allow you to visualize and measure transient flows with unprecedented frame rates of up to 10,000 images per second and up to 2 mm spatial resolution and thus to disclose even the last unresolved detail of your flow problem. How the Wire-Mesh-Sensor works Wire-mesh sensors measure characteristic multiphase flow parameter by a grid of fine wire electrodes in the flow cross-section. The wires are very thin, typically 0.25 mm. Thus the sensor generates virtually no pressure drop. Usually, wire-mesh sensors are operated in pipes or columns. But special designs also allow the investigation of other flow cross-sections. If round or square, small or large – wire-mesh sensors offer all the required flexibility. Learn more about it: Wire-Mesh-Sensor in detail   Measurement method Wire-mesh sensors employ an electrical measurement principle for the differentiation of the individual phases in the flow. By choosing between conductivity or capacitive measurement scheme you may analyze virtually any solids-free type of multiphase flow. Examples are water-gas, water-steam and oil-gas flows. Learn more about it: multiphase-flow-measurements

Offer: Hardware / Machinery

The first low-cost VIS–IR sensor in a single element

D-BAND is a revolutionary dual-band optical sensor that delivers seamless detection across the visible and short-wave infrared (SWIR) spectrum — all in a single, CMOS-compatible element. With a low cost production per device, D-BAND enables compact, high-performance sensing for mass-market applications.   Designed for room-temperature operation, RoHS compliance, and easy system integration, D-BAND offers a disruptive alternative to bulky, expensive multi-material detector solutions. Key features  Broad spectral coverage: 300–1900 nm (VIS–NIR–SWIR) Monolithic sensor design: Single-element architecture Ultra-low cost: < 1 €/device — scalable and accessible CMOS-compatible: Integrates directly with standard electronics Stable at room temperature: No cooling or vacuum packaging required Compact & robust: Ideal for portable and embedded platform Technology A silicon breakthrough for broadband photodetection At the core of D-BAND is a proprietary silicon-based photodetector structure that leverages deep-level impurity engineering to extend spectral sensitivity far beyond the visible range — all the way to 1900 nm.   Our approach enables: Single-material design — eliminating the need for compound semiconductors High absorption efficiency in both visible and SWIR bands Room-temperature operation — no thermoelectric or cryogenic cooling Mass manufacturability using standard CMOS processing   This novel technology makes D-BAND uniquely positioned to disrupt the optical sensing landscape by replacing expensive, multi-material, multi-element stacks with a single, compact chip.   We believe in a future where spectral sensing is ubiquitous, affordable, and scalable.

Offer: Hardware / Machinery

Offer: Software

Offer: Expertise

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Offer: Patent

Offer: Patent

Offer: Patent

Offer: Patent