D-BAND is a revolutionary dual-band optical sensor that delivers seamless detection across the visible and short-wave infrared (SWIR) spectrum — all in a single, CMOS-compatible element. With a low cost production per device, D-BAND enables compact, high-performance sensing for mass-market applications.

Designed for room-temperature operation, RoHS compliance, and easy system integration, D-BAND offers a disruptive alternative to bulky, expensive multi-material detector solutions.



Key features 

Broad spectral coverage: 300–1900 nm (VIS–NIR–SWIR)

Monolithic sensor design: Single-element architecture

Ultra-low cost: < 1 €/device — scalable and accessible

CMOS-compatible: Integrates directly with standard electronics

Stable at room temperature: No cooling or vacuum packaging required

Compact & robust: Ideal for portable and embedded platform





Technology

A silicon breakthrough for broadband photodetection

At the core of D-BAND is a proprietary silicon-based photodetector structure that leverages deep-level impurity engineering to extend spectral sensitivity far beyond the visible range — all the way to 1900 nm.

Our approach enables:

Single-material design — eliminating the need for compound semiconductors

High absorption efficiency in both visible and SWIR bands

Room-temperature operation — no thermoelectric or cryogenic cooling

Mass manufacturability using standard CMOS processing

This novel technology makes D-BAND uniquely positioned to disrupt the optical sensing landscape by replacing expensive, multi-material, multi-element stacks with a single, compact chip.

We believe in a future where spectral sensing is ubiquitous, affordable, and scalable.